Discrete Semiconductor Products

VS-1N1200A

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DIODE GEN PURP 100V 12A DO203AA

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Discrete Semiconductor Products

Active

DIODE GEN PURP 100V 12A DO203AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-1N1200A

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	2.5 mA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-203AA, Stud, DO-4
Speed [Min]	200 mA, 500 ns
Supplier Device Package	DO-4
Supplier Device Package	DO-203AA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.35 V

Part	Speed [Min]	Supplier Device Package	Supplier Device Package	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Mounting Type
Vishay General Semiconductor - Diodes Division VS-1N1200A	200 mA 500 ns	DO-4	DO-203AA	12 A	200 C	-65 C	2.5 mA	1.35 V	100 V	Standard	DO-203AA DO-4 Stud	Chassis Stud Mount
Vishay General Semiconductor - Diodes Division VS-1N1200RA	200 mA 500 ns	DO-4	DO-203AA	12 A	200 C	-65 C	2.5 mA	1.35 V	100 V	Reverse Polarity Standard	DO-203AA DO-4 Stud	Chassis Stud Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 100 V 12A Chassis, Stud Mount DO-203AA (DO-4)

Technical documentation and resources