STD65N55F3
ActiveAUTOMOTIVE-GRADE N-CHANNEL 55 V, 6.5 MΩ TYP., 80 A STRIPFET F3 POWER MOSFET IN A DPAK PACKAGE
STD65N55F3
ActiveAUTOMOTIVE-GRADE N-CHANNEL 55 V, 6.5 MΩ TYP., 80 A STRIPFET F3 POWER MOSFET IN A DPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STD65N55F3 |
|---|---|
| Drain to Source Voltage (Vdss) | 55 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 110 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 8.5 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STD65N55F3 Series
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique "Single Feature Size" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.
Documents
Technical documentation and resources