Discrete Semiconductor Products

FCU900N60Z

Obsolete

ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET® II, FAST, 600V, 4.5A, 900MΩ, IPAK

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Discrete Semiconductor Products

FCU900N60Z

Obsolete

ON Semiconductor

POWER MOSFET, N-CHANNEL, SUPERFET® II, FAST, 600V, 4.5A, 900MΩ, IPAK

Deep-Dive with AI

DocumentsDatasheet Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FCU900N60Z

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	710 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	52 W
Rds On (Max) @ Id, Vgs [Max]	900 mOhm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

FCU900N60Z Series

Power MOSFET, N-Channel, SuperFET® II, FAST, 600V, 4.5A, 900mΩ, IPAK

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FCU900N60Z	4.5 A	3.5 V	MOSFET (Metal Oxide)	20 V	52 W	10 V	Through Hole	IPAK	-55 °C	150 °C	600 V	N-Channel	900 mOhm	710 pF	TO-251-3 Stub Leads IPAK	17 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FCU900N60Z Series

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Documents

Technical documentation and resources