FCU900N60Z Series

Power MOSFET, N-Channel, SuperFET® II, FAST, 600V, 4.5A, 900mΩ, IPAK

Catalog

Power MOSFET, N-Channel, SuperFET® II, FAST, 600V, 4.5A, 900mΩ, IPAK

Part	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs
ON Semiconductor FCU900N60Z	4.5 A	3.5 V	MOSFET (Metal Oxide)	20 V	52 W	10 V	Through Hole	IPAK	-55 °C	150 °C	600 V	N-Channel	900 mOhm	710 pF	TO-251-3 Stub Leads IPAK	17 nC

Catalog

Power MOSFET, N-Channel, SuperFET® II, FAST, 600V, 4.5A, 900mΩ, IPAK

Key Features

• 675V @TJ= 150°C

• Max. RDS(on)= 900mΩ

• Ultra low gate charge ( Typ. Qg= 13nC )

• Low effective output capacitance ( Typ. Coss.eff = 49pF )

• 100% avalanche tested

• ESD improved capacity

Description

SuperFET®II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.