Discrete Semiconductor Products

SIB422EDK-T1-GE3

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MOSFET N-CH 20V 9A PPAK SC75-6

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Discrete Semiconductor Products

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MOSFET N-CH 20V 9A PPAK SC75-6

Technical Specifications

Parameters and characteristics for this part

Specification	SIB422EDK-T1-GE3

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	18 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SC-75-6
Power Dissipation (Max)	13 W, 2.5 W
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	PowerPAK® SC-75-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Package / Case	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SIB422EDK-T4-GE3	20 V	-55 °C	150 °C	7.1 A 9 A	N-Channel	PowerPAK® SC-75-6	30 mOhm	2.5 W 13 W	8 V	18 nC	Surface Mount	PowerPAK® SC-75-6	MOSFET (Metal Oxide)	1 V	1.5 V 4.5 V
Vishay General Semiconductor - Diodes Division SIB422EDK-T1-GE3	20 V	-55 °C	150 °C	9 A	N-Channel	PowerPAK® SC-75-6	30 mOhm	2.5 W 13 W	8 V		Surface Mount	PowerPAK® SC-75-6	MOSFET (Metal Oxide)	1 V	1.5 V 4.5 V	18 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 9A (Tc) 2.5W (Ta), 13W (Tc) Surface Mount PowerPAK® SC-75-6

Technical documentation and resources