SIB422 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 20V 7.1A/9A PPAK
| Part | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | FET Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Package / Case | Technology | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 20 V | -55 °C | 150 °C | 7.1 A 9 A | N-Channel | PowerPAK® SC-75-6 | 30 mOhm | 2.5 W 13 W | 8 V | 18 nC | Surface Mount | PowerPAK® SC-75-6 | MOSFET (Metal Oxide) | 1 V | 1.5 V 4.5 V | |
 Vishay General Semiconductor - Diodes Division | 20 V | -55 °C | 150 °C | 9 A | N-Channel | PowerPAK® SC-75-6 | 30 mOhm | 2.5 W 13 W | 8 V | Surface Mount | PowerPAK® SC-75-6 | MOSFET (Metal Oxide) | 1 V | 1.5 V 4.5 V | 18 nC |