Discrete Semiconductor Products

SI4427BDY-T1-E3

LTB

MOSFET P-CH 30V 9.7A 8SO

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Discrete Semiconductor Products

LTB

MOSFET P-CH 30V 9.7A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4427BDY-T1-E3

Current - Continuous Drain (Id) @ 25°C	9.7 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	70 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	1.5 W
Rds On (Max) @ Id, Vgs	10.5 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Part	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Power Dissipation (Max)	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]
Vishay General Semiconductor - Diodes Division SI4427BDY-T1-E3	MOSFET (Metal Oxide)	10.5 mOhm	8-SOIC	3.9 mm	0.154 in	1.5 W	8-SOIC	12 V	9.7 A	70 nC	-55 °C	150 °C	30 V	P-Channel	1.4 V	Surface Mount	10 V	2.5 V

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General part information

P-Channel 30 V 9.7A (Ta) 1.5W (Ta) Surface Mount 8-SOIC

Technical documentation and resources