SI4427 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 30V 9.7A 8SO
| Part | Technology | Rds On (Max) @ Id, Vgs | Package / Case | Package / Case [y] | Package / Case [x] | Power Dissipation (Max) | Supplier Device Package | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | FET Type | Vgs(th) (Max) @ Id | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | 10.5 mOhm | 8-SOIC | 3.9 mm | 0.154 in | 1.5 W | 8-SOIC | 12 V | 9.7 A | 70 nC | -55 °C | 150 °C | 30 V | P-Channel | 1.4 V | Surface Mount | 10 V | 2.5 V |