STGW40M120DF3
ActiveTRENCH GATE FIELD-STOP IGBT, M SERIES 1200 V, 40 A LOW LOSS
Deep-Dive with AI
Search across all available documentation for this part.
STGW40M120DF3
ActiveTRENCH GATE FIELD-STOP IGBT, M SERIES 1200 V, 40 A LOW LOSS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGW40M120DF3 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Gate Charge | 125 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 468 W |
| Reverse Recovery Time (trr) | 355 ns |
| Supplier Device Package | TO-247-3 |
| Switching Energy | 2.25 mJ, 1.5 mJ |
| Td (on/off) @ 25°C | 140 ns, 35 ns |
| Test Condition | 40 A, 600 V, 15 V, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGW40M120DF3 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat)temperature coefficient and tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources