Discrete Semiconductor Products

SQJ914EP-T1_GE3

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MOSFET 2N-CH 30V 30A PPAK SO8

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Discrete Semiconductor Products

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MOSFET 2N-CH 30V 30A PPAK SO8

Technical Specifications

Parameters and characteristics for this part

Specification	SQJ914EP-T1_GE3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	30 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	25 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1110 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8 Dual
Power - Max [Max]	27 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	PowerPAK® SO-8 Dual
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5 V

Part	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Vgs(th) (Max) @ Id	Configuration	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power - Max [Max]	Grade	Qualification
Vishay General Semiconductor - Diodes Division SQJ914EP-T1_GE3	12 mOhm	MOSFET (Metal Oxide)	PowerPAK® SO-8 Dual	2.5 V	2 N-Channel (Dual)	Surface Mount	30 V	-55 °C	175 ░C	30 A	1110 pF	PowerPAK® SO-8 Dual	25 nC	27 W	Automotive	AEC-Q101

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General part information

Mosfet Array 30V 30A (Tc) 27W (Tc) Surface Mount PowerPAK® SO-8 Dual

Technical documentation and resources