SQJ914 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET 2N-CH 30V 30A PPAK SO8
| Part | Rds On (Max) @ Id, Vgs | Technology | Package / Case | Vgs(th) (Max) @ Id | Configuration | Mounting Type | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Power - Max [Max] | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 12 mOhm | MOSFET (Metal Oxide) | PowerPAK® SO-8 Dual | 2.5 V | 2 N-Channel (Dual) | Surface Mount | 30 V | -55 °C | 175 ░C | 30 A | 1110 pF | PowerPAK® SO-8 Dual | 25 nC | 27 W | Automotive | AEC-Q101 |