Discrete Semiconductor Products
RS3E135BNGZETB
ActiveRohm Semiconductor
NCH 30V 13.5A MIDDLE POWER MOSFET
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Discrete Semiconductor Products
RS3E135BNGZETB
ActiveRohm Semiconductor
NCH 30V 13.5A MIDDLE POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | RS3E135BNGZETB |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9.5 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 680 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Power Dissipation (Max) | 2 W |
| Rds On (Max) @ Id, Vgs | 14.6 mOhm |
| Supplier Device Package | 8-SOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 4913 | $ 1.61 | |
Description
General part information
RS3E135BN Series
RS3E135BN is low on-resistance and small surface mount package MOSFET for switching application.
Documents
Technical documentation and resources