Discrete Semiconductor Products
STQ1NK80ZR-AP
ActiveSTMicroelectronics
POWER MOSFET, N CHANNEL, 300 MA, 800 V, 13 OHM, 10 V, 3.75 V ROHS COMPLIANT: YES
Discrete Semiconductor Products
STQ1NK80ZR-AP
ActiveSTMicroelectronics
POWER MOSFET, N CHANNEL, 300 MA, 800 V, 13 OHM, 10 V, 3.75 V ROHS COMPLIANT: YES
Technical Specifications
Parameters and characteristics for this part
| Specification | STQ1NK80ZR-AP |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 300 mA |
| Drain to Source Voltage (Vdss) | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 160 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Power Dissipation (Max) | 3 W |
| Supplier Device Package | TO-92-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STQ1NK80ZR-AP Series
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
Documents
Technical documentation and resources