Discrete Semiconductor Products
STP65NF06
ObsoleteSTMicroelectronics
POWER MOSFET, N CHANNEL, 60 V, 60 A, 14 MILLIOHMS, TO-220, 3 PINS, THROUGH HOLE
Discrete Semiconductor Products
STP65NF06
ObsoleteSTMicroelectronics
POWER MOSFET, N CHANNEL, 60 V, 60 A, 14 MILLIOHMS, TO-220, 3 PINS, THROUGH HOLE
Technical Specifications
Parameters and characteristics for this part
| Specification | STP65NF06 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 75 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 110 W |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
Description
General part information
STP65NF06 Series
This Power MOSFET is the latest development of STMicroelectronics unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Documents
Technical documentation and resources