Discrete Semiconductor Products

BUV48A

NRND

TRANSISTOR,NPN,TO-247,TRANSISTOR POLARITY-NPN,COLLECTOR EMITTER VOLTAGE VBRCEO-450V,TRANSITION FREQUENCY FT-,POWER DISSIPATION P

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Discrete Semiconductor Products

NRND

TRANSISTOR,NPN,TO-247,TRANSISTOR POLARITY-NPN,COLLECTOR EMITTER VOLTAGE VBRCEO-450V,TRANSITION FREQUENCY FT-,POWER DISSIPATION P

Technical Specifications

Parameters and characteristics for this part

Specification	BUV48A

Current - Collector (Ic) (Max) [Max]	15 A
Current - Collector Cutoff (Max) [Max]	200 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	8
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Supplier Device Package	TO-247-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	450 V

High voltage fast switching NPN power transistor

Part	Mounting Type	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Transistor Type	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
STMicroelectronics BUV48A	Through Hole	TO-247-3	200 µA	NPN	150 °C	5 V	15 A	TO-247-3	450 V	8

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The device is a multiepitaxial mesa NPN transistor mounted in TO-247 plastic package.

It is intended for switching and industrial applications from single and three-phase mains.

Technical documentation and resources