Discrete Semiconductor Products

BU508AFI

Obsolete

STMicroelectronics

TRANS NPN 700V 8A ISOWATT-218FX

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

Discrete Semiconductor Products

BU508AFI

Obsolete

STMicroelectronics

TRANS NPN 700V 8A ISOWATT-218FX

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BU508AFI

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	1 mA
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	ISOWATT-218-3
Power - Max [Max]	50 W
Supplier Device Package	ISOWATT-218FX
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	700 V

BU508AF Series

High voltage NPN power transistor for standard definition CRT display

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Transistor Type	Power - Max [Max]	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Package / Case	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
STMicroelectronics BU508AFI	700 V	ISOWATT-218FX	NPN	50 W	150 °C	8 A	ISOWATT-218-3	1 mA	1 V	Through Hole
STMicroelectronics BU508AW	700 V	TO-247-3	NPN		150 °C	8 A	TO-247-3	200 µA	1 V	Through Hole	10
STMicroelectronics BU508AF	700 V	TO-3PF	NPN	50 W	150 °C	8 A	TO-3P-3 Full Pack	200 µA	1 V	Through Hole	10

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

BU508AF Series

The BU508AF is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure for updated performance to the horizontal deflection stage.

Documents

Technical documentation and resources