Specification	FDC6506P

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	1.8 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	3.5 nC
Input Capacitance (Ciss) (Max) @ Vds	190 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TSOT-23-6, SOT-23-6 Thin
Power - Max [Max]	700 mW
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	SuperSOT™-6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

FDC6506P Series

Dual P-Channel PowerTrench® MOSFET, Logic Level, -30V, -1.8A, 170mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	FET Feature	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Configuration
ON Semiconductor FDC6506P	3.5 nC	30 V	SuperSOT™-6	170 mOhm	Surface Mount	-55 °C	150 °C	700 mW	1.8 A	Logic Level Gate	MOSFET (Metal Oxide)	190 pF	3 V	SOT-23-6 Thin TSOT-23-6	2 P-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FDC6506P Series

These P-Channel logic level MOSFETs are produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.