FDC6506P Series

Dual P-Channel PowerTrench® MOSFET, Logic Level, -30V, -1.8A, 170mΩ

Catalog

Dual P-Channel PowerTrench® MOSFET, Logic Level, -30V, -1.8A, 170mΩ

Part	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Current - Continuous Drain (Id) @ 25°C	FET Feature	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Package / Case	Configuration
ON Semiconductor FDC6506P	3.5 nC	30 V	SuperSOT™-6	170 mOhm	Surface Mount	-55 °C	150 °C	700 mW	1.8 A	Logic Level Gate	MOSFET (Metal Oxide)	190 pF	3 V	SOT-23-6 Thin TSOT-23-6	2 P-Channel

Catalog

Dual P-Channel PowerTrench® MOSFET, Logic Level, -30V, -1.8A, 170mΩ

Key Features

-1.8 A, -30 V.

• RDS(on)= 0.170 Ω @ VGS= -10 V

• RDS(on)= 0.280 Ω @ VGS= -4.5 V

• Low gate charge (2.3nC typical)

• Fast switching speed.

• High performance trench technology for extremely low RDS(ON)

• SuperSOT™-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

Description

These P-Channel logic level MOSFETs are produced using an advanced PowerTrench®process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.