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PMXB43UNEZ
Discrete Semiconductor Products

PMXB43UNEZ

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Nexperia USA Inc.

TRANS MOSFET N-CH 20V 3.2A 3-PIN DFN

PMXB43UNEZ
Discrete Semiconductor Products

PMXB43UNEZ

Active
Nexperia USA Inc.

TRANS MOSFET N-CH 20V 3.2A 3-PIN DFN

Technical Specifications

Parameters and characteristics for this part

SpecificationPMXB43UNEZ
Current - Continuous Drain (Id) @ 25°C3.2 A
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.5 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]10 nC
Input Capacitance (Ciss) (Max) @ Vds551 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case3-XDFN Exposed Pad
Power Dissipation (Max)8.33 W
Power Dissipation (Max)400 mW
Rds On (Max) @ Id, Vgs54 mOhm
Supplier Device PackageDFN1010D-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max) [Max]8 V
Vgs(th) (Max) @ Id900 mV

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 0.58

Description

General part information

PMXB43UNE Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.