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20 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, N-channel Trench MOSFET
20 V, N-channel Trench MOSFET
| Part | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Technology | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Vgs (Max) [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 54 mOhm | 551 pF | N-Channel | 20 V | 3.2 A | MOSFET (Metal Oxide) | DFN1010D-3 | 10 nC | 3-XDFN Exposed Pad | 8 V | 150 °C | -55 °C | 900 mV | Surface Mount | 1.5 V 4.5 V | 8.33 W | 400 mW |