Discrete Semiconductor Products
PMGD290XN,115
NRNDNexperia USA Inc.
TRANSISTOR: N-MOSFET X2; UNIPOLAR; 20V; 860MA; IDM: 1.72A; 410MW
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
PMGD290XN,115
NRNDNexperia USA Inc.
TRANSISTOR: N-MOSFET X2; UNIPOLAR; 20V; 860MA; IDM: 1.72A; 410MW
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PMGD290XN,115 |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 860 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 0.72 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 34 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-363, SC-88, 6-TSSOP |
| Power - Max [Max] | 410 mW |
| Rds On (Max) @ Id, Vgs | 350 mOhm |
| Supplier Device Package | 6-TSSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PMGD290XN Series
Dual N-channel TrenchMOS extremely low level FET
Documents
Technical documentation and resources