Catalog
Dual N-channel TrenchMOS extremely low level FET
Beta
⌘K
Dual N-channel TrenchMOS extremely low level FET
Dual N-channel TrenchMOS extremely low level FET
| Part | Current - Continuous Drain (Id) @ 25°C | FET Feature | Vgs(th) (Max) @ Id | Supplier Device Package | Configuration | Technology | Mounting Type | Power - Max [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 860 mA | Logic Level Gate | 1.5 V | 6-TSSOP | 2 N-Channel (Dual) | MOSFET (Metal Oxide) | Surface Mount | 410 mW | 34 pF | 20 V | 0.72 nC | 150 °C | -55 °C | 6-TSSOP SC-88 SOT-363 | 350 mOhm |