Discrete Semiconductor Products

IRFP22N50APBF

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MOSFET N-CH 500V 22A TO247-3

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Discrete Semiconductor Products

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MOSFET N-CH 500V 22A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFP22N50APBF

Current - Continuous Drain (Id) @ 25°C	22 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	3450 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	277 W
Rds On (Max) @ Id, Vgs	230 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs (Max)	Rds On (Max) @ Id, Vgs	Technology	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division IRFP22N50APBF	30 V	230 mOhm	MOSFET (Metal Oxide)	TO-247-3	3450 pF	10 V	500 V	277 W	120 nC	Through Hole	22 A	-55 °C	150 °C	TO-247AC	N-Channel	4 V
Vishay General Semiconductor - Diodes Division IRFP22N60C3PBF			MOSFET (Metal Oxide)	TO-247-3			650 V			Through Hole	22 A			TO-247AC	N-Channel
Vishay General Semiconductor - Diodes Division IRFP22N60K	30 V		MOSFET (Metal Oxide)	TO-247-3	3570 pF	10 V	600 V			Through Hole	22 A	-55 °C	150 °C	TO-247AC	N-Channel	5 V	280 mOhm	370 W	150 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 22A (Tc) 277W (Tc) Through Hole TO-247AC

Technical documentation and resources

No documents available