IRFP22 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 500V 22A TO247-3
| Part | Vgs (Max) | Rds On (Max) @ Id, Vgs | Technology | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | FET Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 30 V | 230 mOhm | MOSFET (Metal Oxide) | TO-247-3 | 3450 pF | 10 V | 500 V | 277 W | 120 nC | Through Hole | 22 A | -55 °C | 150 °C | TO-247AC | N-Channel | 4 V | |||
Vishay General Semiconductor - Diodes Division | MOSFET (Metal Oxide) | TO-247-3 | 650 V | Through Hole | 22 A | TO-247AC | N-Channel | ||||||||||||
Vishay General Semiconductor - Diodes Division | 30 V | MOSFET (Metal Oxide) | TO-247-3 | 3570 pF | 10 V | 600 V | Through Hole | 22 A | -55 °C | 150 °C | TO-247AC | N-Channel | 5 V | 280 mOhm | 370 W | 150 nC |