Discrete Semiconductor Products

TN2504N8-G

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TRANSISTOR: N-MOSFET; UNIPOLAR; 40V; 890MA; IDM: 4.5A; 1.6W; SOT89-3

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Discrete Semiconductor Products

Active

TRANSISTOR: N-MOSFET; UNIPOLAR; 40V; 890MA; IDM: 4.5A; 1.6W; SOT89-3

Technical Specifications

Parameters and characteristics for this part

Specification	TN2504N8-G

Current - Continuous Drain (Id) @ 25°C	890 mA
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	125 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-243AA
Power Dissipation (Max)	1.6 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	TO-243AA (SOT-89)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.6 V

Part	Rds On (Max) @ Id, Vgs	FET Type	Package / Case	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)
Microchip Technology TN2504N8-G	1 Ohm	N-Channel	TO-243AA	20 V	Surface Mount	10 V	5 V	-55 °C	150 °C	125 pF	MOSFET (Metal Oxide)	TO-243AA (SOT-89)	890 mA	1.6 W	1.6 V	40 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Low threshold (1.6V max.)

High input impedance

Low input capacitance (125pF max.)

Technical documentation and resources