
LP2996M/NOPB
ActiveDDR MEMORY TERMINATION REGULATOR 2.2V TO 5.5V 8-PIN SOIC TUBE
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LP2996M/NOPB
ActiveDDR MEMORY TERMINATION REGULATOR 2.2V TO 5.5V 8-PIN SOIC TUBE
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Technical Specifications
Parameters and characteristics for this part
| Specification | LP2996M/NOPB |
|---|---|
| Applications | DDR Terminator |
| Current - Supply | 320 µA |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 125 °C |
| Operating Temperature [Min] | 0 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Supplier Device Package | 8-SOIC |
| Voltage - Supply [Max] | 5.5 V |
| Voltage - Supply [Min] | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Arrow | N/A | 1 | $ 0.20 | |
| 10 | $ 0.20 | |||
| 25 | $ 0.20 | |||
| Digikey | Tube | 1 | $ 1.82 | |
| 10 | $ 1.63 | |||
| 95 | $ 1.31 | |||
| 285 | $ 1.23 | |||
| 570 | $ 1.08 | |||
| 1045 | $ 0.89 | |||
| 2565 | $ 0.83 | |||
| 5035 | $ 0.80 | |||
| Texas Instruments | TUBE | 1 | $ 1.37 | |
| 100 | $ 1.13 | |||
| 250 | $ 0.81 | |||
| 1000 | $ 0.61 | |||
Description
General part information
LP2996-N Series
The LP2996-N and LP2996A linear regulators are designed to meet the JEDEC SSTL-2 specifications for termination of DDR-SDRAM. The device also supports DDR2, while LP2996A supports DDR3 and DDR3L VTT bus termination with VDDQminimum of 1.35 V. The device contains a high-speed operational amplifier to provide excellent response to load transients. The output stage prevents shoot through while delivering 1.5-A continuous current and transient peaks up to 3 A in the application as required for DDR-SDRAM termination. The LP2996-N and LP2996A also incorporate a VSENSE pin to provide superior load regulation and a VREF output as a reference for the chipset and DIMMs.
An additional feature found on the LP2996-N and LP2996A is an active-low shutdown (SD) pin that provides Suspend To RAM (STR) functionality. WhenSDis pulled low the VTT output will tri-state providing a high impedance output, but VREF remains active. A power savings advantage can be obtained in this mode through lower quiescent current.
TI recommends the LP2998 and LP2998-Q1 devices for automotive applications and DDR applications that require operating at temperatures below zero.