Discrete Semiconductor Products
STGYA120M65DF2
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M SERIES 650 V, 120 A LOW LOSS
Discrete Semiconductor Products
STGYA120M65DF2
ActiveSTMicroelectronics
TRENCH GATE FIELD-STOP IGBT, M SERIES 650 V, 120 A LOW LOSS
Technical Specifications
Parameters and characteristics for this part
| Specification | STGYA120M65DF2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 160 A |
| Current - Collector Pulsed (Icm) | 360 A |
| Gate Charge | 420 nC |
| IGBT Type | NPT, Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 Exposed Pad |
| Power - Max [Max] | 625 W |
| Reverse Recovery Time (trr) | 202 ns |
| Supplier Device Package | MAX247™ |
| Switching Energy | 4.41 mJ, 1.8 mJ |
| Td (on/off) @ 25°C [custom] | 66 ns |
| Td (on/off) @ 25°C [custom] | 185 ns |
| Test Condition | 400 V, 4.7 Ohm, 120 A, 15 V |
| Vce(on) (Max) @ Vge, Ic | 1.95 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 526 | $ 8.53 | |
Description
General part information
STGYA120M65DF2 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation.