Discrete Semiconductor Products

MIP50R12E2ATN-BP

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IGBT MODULES 1200V 50A, E2A

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Discrete Semiconductor Products

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IGBT MODULES 1200V 50A, E2A

Technical Specifications

Parameters and characteristics for this part

Specification	MIP50R12E2ATN-BP

Configuration	Three Phase Inverter
Current - Collector (Ic) (Max)	50 A
Current - Collector Cutoff (Max) [Max]	1 mA
Input	Three Phase Bridge Rectifier
Input Capacitance (Cies) @ Vce	2.6 nF
Mounting Type	Chassis Mount
NTC Thermistor	True
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	Module
Power - Max [Max]	288 W
Supplier Device Package	E2A
Vce(on) (Max) @ Vge, Ic	2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

Part	Input Capacitance (Cies) @ Vce	Vce(on) (Max) @ Vge, Ic	Package / Case	Current - Collector (Ic) (Max)	NTC Thermistor	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Mounting Type	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Input	Current - Collector Cutoff (Max) [Max]
Micro Commercial Components MIP50R12E1ATN-BP	2.6 nF	2.3 V	Module	50 A		288 W	1200 V	Chassis Mount	Three Phase Inverter	150 °C	-40 °C	E1A	Three Phase Bridge Rectifier	1 mA
Micro Commercial Components MIP50R12E2ATN-BP	2.6 nF	2.3 V	Module	50 A		288 W	1200 V	Chassis Mount	Three Phase Inverter	150 °C	-40 °C	E2A	Three Phase Bridge Rectifier	1 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1	$ 121.71

General part information

IGBT Module Three Phase Inverter 1200 V 50 A 288 W Chassis Mount E2A

Technical documentation and resources