Discrete Semiconductor Products
STGP19NC60KD
ActiveSTMicroelectronics
20 A, 600 V SHORT CIRCUIT RUGGED IGBT
Deep-Dive with AI
Search across all available documentation for this part.
Discrete Semiconductor Products
STGP19NC60KD
ActiveSTMicroelectronics
20 A, 600 V SHORT CIRCUIT RUGGED IGBT
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGP19NC60KD |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 35 A |
| Current - Collector Pulsed (Icm) | 75 A |
| Gate Charge | 55 nC |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Reverse Recovery Time (trr) | 31 ns |
| Supplier Device Package | TO-220 |
| Switching Energy | 165 µJ, 255 µJ |
| Td (on/off) @ 25°C [custom] | 105 ns |
| Td (on/off) @ 25°C [custom] | 30 ns |
| Test Condition | 15 V, 12 A, 10 Ohm, 480 V |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.75 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 8 | $ 3.21 | |
Description
General part information
STGP19NC60KD Series
These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.