Discrete Semiconductor Products

ECH8602M-TL-H

Obsolete

MOSFET 2N-CH 30V 6A 8ECH

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET 2N-CH 30V 6A 8ECH

Technical Specifications

Parameters and characteristics for this part

Specification	ECH8602M-TL-H

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	7.5 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	1.5 W
Rds On (Max) @ Id, Vgs [Max]	30 mOhm
Supplier Device Package	8-ECH
Technology	MOSFET (Metal Oxide)

Part	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	FET Feature	Operating Temperature	Drain to Source Voltage (Vdss)	Supplier Device Package	Configuration
ON Semiconductor ECH8602M-TL-H	1.5 W	7.5 nC	6 A	MOSFET (Metal Oxide)	30 mOhm	Surface Mount	Logic Level Gate	150 °C	30 V	8-ECH	2 N-Channel (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 6A 1.5W Surface Mount 8-ECH

Technical documentation and resources

No documents available