Discrete Semiconductor Products

SI4948BEY-T1-GE3

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MOSFET 2P-CH 60V 2.4A 8SOIC

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Discrete Semiconductor Products

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MOSFET 2P-CH 60V 2.4A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4948BEY-T1-GE3

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.4 A
Drain to Source Voltage (Vdss)	60 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	22 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	1.4 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Configuration	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power - Max [Max]	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Supplier Device Package	Rds On (Max) @ Id, Vgs
Vishay General Semiconductor - Diodes Division SI4948BEY-T1-GE3	2 P-Channel	22 nC	60 V	2.4 A	3 V	1.4 W	8-SOIC	3.9 mm	0.154 in	Surface Mount	MOSFET (Metal Oxide)	-55 °C	175 ░C	Logic Level Gate	8-SOIC	120 mOhm
Vishay General Semiconductor - Diodes Division SI4948BEY-T1-E3	2 P-Channel	22 nC	60 V	2.4 A	3 V	1.4 W	8-SOIC	3.9 mm	0.154 in	Surface Mount	MOSFET (Metal Oxide)	-55 °C	175 ░C	Logic Level Gate	8-SOIC	120 mOhm

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General part information

Mosfet Array 60V 2.4A 1.4W Surface Mount 8-SOIC

Technical documentation and resources