SI4948 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET 2P-CH 60V 2.4A 8SOIC
| Part | Configuration | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Power - Max [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Mounting Type | Technology | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature | Supplier Device Package | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2 P-Channel | 22 nC | 60 V | 2.4 A | 3 V | 1.4 W | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | MOSFET (Metal Oxide) | -55 °C | 175 ░C | Logic Level Gate | 8-SOIC | 120 mOhm |
 Vishay General Semiconductor - Diodes Division | 2 P-Channel | 22 nC | 60 V | 2.4 A | 3 V | 1.4 W | 8-SOIC | 3.9 mm | 0.154 in | Surface Mount | MOSFET (Metal Oxide) | -55 °C | 175 ░C | Logic Level Gate | 8-SOIC | 120 mOhm |