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SOT23
Discrete Semiconductor Products

PMV90ENER

NRND
Nexperia USA Inc.

MOSFET N-CHANNEL 30V 3A TO236AB

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SOT23
Discrete Semiconductor Products

PMV90ENER

NRND
Nexperia USA Inc.

MOSFET N-CHANNEL 30V 3A TO236AB

Technical Specifications

Parameters and characteristics for this part

SpecificationPMV90ENER
Current - Continuous Drain (Id) @ 25°C3 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs5.5 nC
Input Capacitance (Ciss) (Max) @ Vds160 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]460 mW
Rds On (Max) @ Id, Vgs72 mOhm
Supplier Device PackageTO-236AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2762$ 0.53

Description

General part information

PMV90ENE Series

30 V, N-channel Trench MOSFET