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30 V, N-channel Trench MOSFET
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) [Max] | Technology | FET Type | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Vgs(th) (Max) @ Id | Package / Case | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | TO-236AB | 3 A | 5.5 nC | 460 mW | MOSFET (Metal Oxide) | N-Channel | 30 V | 72 mOhm | 150 °C | -55 °C | 2.5 V | SC-59 SOT-23-3 TO-236-3 | 20 V | 4.5 V 10 V | Surface Mount | 160 pF |