Discrete Semiconductor Products

NVD5802NT4G-TB01

Obsolete

ON Semiconductor

MOSFET N-CH 40V 16.4A/101A DPAK

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Discrete Semiconductor Products

NVD5802NT4G-TB01

Obsolete

ON Semiconductor

MOSFET N-CH 40V 16.4A/101A DPAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NVD5802NT4G-TB01

Current - Continuous Drain (Id) @ 25°C	16.4 A, 101 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	5300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	93.75 W, 2.5 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	4.4 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

NVD5803N Series

Power MOSFET 40V, 85A, 5.7 mOhm, Single N-Channel, DPAK.

Part	Qualification	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Mounting Type	Power Dissipation (Max)	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Grade	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [x]
ON Semiconductor NVD5802NT4G-TB01	AEC-Q101	3.5 V	20 V	5300 pF	MOSFET (Metal Oxide)	N-Channel	Surface Mount	2.5 W 93.75 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	100 nC	10 V	5 V	16.4 A 101 A	-55 °C	175 ░C	4.4 mOhm	40 V	Automotive
ON Semiconductor NVD5807NT4G	AEC-Q101	2.5 V	20 V	603 pF	MOSFET (Metal Oxide)	N-Channel	Surface Mount		DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK				23 A	-55 °C	175 ░C	31 mOhm	40 V	Automotive	33 W	4.5 V 10 V	20 nC
ON Semiconductor NVD5803NT4G	AEC-Q101	3.5 V	20 V	3220 pF	MOSFET (Metal Oxide)	N-Channel	Surface Mount	83 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	51 nC	10 V	5 V	85 A	-55 °C	175 ░C	5.7 mOhm	40 V	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NVD5803N Series

Automotive Power MOSFET. The NVD58xxN series are 40V Trench N-Channel power MOSFET ideal for use in Automotive, LCD Backlight, LED drivers, and power supply secondaries, where RDS(on) performance and industry standard packaging are important. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

Documents

Technical documentation and resources