NVD5803N Series

Power MOSFET 40V, 85A, 5.7 mOhm, Single N-Channel, DPAK.

Catalog

Power MOSFET 40V, 85A, 5.7 mOhm, Single N-Channel, DPAK.

Part	Qualification	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Mounting Type	Power Dissipation (Max)	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Grade	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [x]
ON Semiconductor NVD5802NT4G-TB01	AEC-Q101	3.5 V	20 V	5300 pF	MOSFET (Metal Oxide)	N-Channel	Surface Mount	2.5 W 93.75 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	100 nC	10 V	5 V	16.4 A 101 A	-55 °C	175 ░C	4.4 mOhm	40 V	Automotive
ON Semiconductor NVD5807NT4G	AEC-Q101	2.5 V	20 V	603 pF	MOSFET (Metal Oxide)	N-Channel	Surface Mount		DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK				23 A	-55 °C	175 ░C	31 mOhm	40 V	Automotive	33 W	4.5 V 10 V	20 nC
ON Semiconductor NVD5803NT4G	AEC-Q101	3.5 V	20 V	3220 pF	MOSFET (Metal Oxide)	N-Channel	Surface Mount	83 W	DPAK (2 Leads + Tab) SC-63 TO-252-3	DPAK	51 nC	10 V	5 V	85 A	-55 °C	175 ░C	5.7 mOhm	40 V	Automotive

Catalog

Power MOSFET 40V, 85A, 5.7 mOhm, Single N-Channel, DPAK.

Key Features

• Low RDS(on)

• High Current Capability

• Avalanche Energy Specified

• AEC−Q101 Qualified and PPAP Capable

• RoHS Compliant

Description

Automotive Power MOSFET. The NVD58xxN series are 40V Trench N-Channel power MOSFET ideal for use in Automotive, LCD Backlight, LED drivers, and power supply secondaries, where RDS(on) performance and industry standard packaging are important. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.