NXH030F120M3F1PTG

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ON Semiconductor

SILICON CARBIDE (SIC) MODULE – ELITESIC, 30 MOHM SIC M3S MOSFET, 1200 V, 4-PACK FULL BRIDGE TOPOLOGY, F1 PACKAGE

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DocumentsDatasheet Package Drawing-180HL-PIM22 33.80x42.50x10.00

Discrete Semiconductor Products

NXH030F120M3F1PTG

Active

ON Semiconductor

SILICON CARBIDE (SIC) MODULE – ELITESIC, 30 MOHM SIC M3S MOSFET, 1200 V, 4-PACK FULL BRIDGE TOPOLOGY, F1 PACKAGE

Deep-Dive with AI

DocumentsDatasheet Package Drawing-180HL-PIM22 33.80x42.50x10.00

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NXH030F120M3F1PTG

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NXH030F120M3F1PTG Series

Silicon Carbide (SiC) Module – EliteSiC, 30 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package

Part
ON Semiconductor NXH030F120M3F1PTG

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	1	$ 78.65
		10	$ 62.38
		25	$ 58.23
		80	$ 56.04
ON Semiconductor	N/A	1	$ 59.77

Description

General part information

NXH030F120M3F1PTG Series

The NXH030F120M3F1PTG is a power module containing 30 mohm / 1200 V SiC MOSFET Full−bridge and a thermistor with Alumina (AL2O3) DBC in an F1 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive.