NXH030F120M3F1PTG Series
Silicon Carbide (SiC) Module – EliteSiC, 30 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package
Manufacturer: ON Semiconductor
Catalog
Silicon Carbide (SiC) Module – EliteSiC, 30 mohm SiC M3S MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package
Key Features
• Excellent FOM [ = Rdson * Eoss ]
• 15V to 18V Gate Drive
• 30 mohm / 1200 V M3S SiC MOSFET Full−Bridge
• These Devices are Pb−Free, Halide Free and are RoHS Compliant
Description
AI
The NXH030F120M3F1PTG is a power module containing 30 mohm / 1200 V SiC MOSFET Full−bridge and a thermistor with Alumina (AL2O3) DBC in an F1 package. The SiC MOSFET switches use M3S technology and are driven with 18V-20V gate drive.