Specification	PBSS5250TH-QR

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	100 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	360 mW
Qualification	AEC-Q101
Supplier Device Package	TO-236AB
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

PBSS5250TH-Q Series

50 V, 2 A PNP low VCEsat (BISS) transistor

Part	Power - Max [Max]	Mounting Type	Grade	Package / Case	Qualification	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature
Nexperia USA Inc. PBSS5250TH-QR	360 mW	Surface Mount	Automotive	SC-59 SOT-23-3 TO-236-3	AEC-Q101	300 mV	2 A	100 MHz	100 nA	TO-236AB	50 V	PNP	200	175 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.16

General part information

PNP low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources