Catalog
50 V, 2 A PNP low VCEsat (BISS) transistor
Description
AI
PNP low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Beta
⌘K
50 V, 2 A PNP low VCEsat (BISS) transistor
50 V, 2 A PNP low VCEsat (BISS) transistor
| Part | Power - Max [Max] | Mounting Type | Grade | Package / Case | Qualification | Vce Saturation (Max) @ Ib, Ic | Current - Collector (Ic) (Max) [Max] | Frequency - Transition | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Transistor Type | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 360 mW | Surface Mount | Automotive | SC-59 SOT-23-3 TO-236-3 | AEC-Q101 | 300 mV | 2 A | 100 MHz | 100 nA | TO-236AB | 50 V | PNP | 200 | 175 °C |