Discrete Semiconductor Products

IQD009N06NM5CGATMA1

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INFINEON

60 V MOSFET PQFN 5X6MM2 SOURCE DOWN PACKAGE WITH VERY LOW RDS(ON).

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Discrete Semiconductor Products

IQD009N06NM5CGATMA1

Active

INFINEON

60 V MOSFET PQFN 5X6MM2 SOURCE DOWN PACKAGE WITH VERY LOW RDS(ON).

Deep-Dive with AI

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Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IQD009N06NM5CGATMA1

Current - Continuous Drain (Id) @ 25°C	445 A, 42 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 6 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	150 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	12000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	9-PowerTDFN
Power Dissipation (Max)	333 W
Power Dissipation (Max)	3 W
Rds On (Max) @ Id, Vgs	0.9 mOhm
Supplier Device Package	PG-TTFN-9-U02
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.3 V

IQD009 Series

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	Supplier Device Package	FET Type	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology
INFINEON IQD009N06NM5CGATMA1	12000 pF	9-PowerTDFN	PG-TTFN-9-U02	N-Channel	3.3 V	60 V	Surface Mount	42 A 445 A	0.9 mOhm	150 nC	175 °C	-55 °C	333 W	3 W	20 V	6 V 10 V	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 4.30
		10	$ 3.86
		25	$ 3.65
		100	$ 3.16
		250	$ 3.00
		500	$ 2.69
		1000	$ 2.27
		2500	$ 2.16
	Digi-Reel®	1	$ 4.30
		10	$ 3.86
		25	$ 3.65
		100	$ 3.16
		250	$ 3.00
		500	$ 2.69
		1000	$ 2.27
		2500	$ 2.16
	N/A	2535	$ 4.02
	Tape & Reel (TR)	5000	$ 2.08
Newark	Each (Supplied on Cut Tape)	1	$ 4.18
		10	$ 3.16
		25	$ 2.90
		50	$ 2.77
		100	$ 2.62
		250	$ 2.50
		500	$ 2.41
		1000	$ 2.35

Description

General part information

IQD009 Series

The power MOSFET IQD009N06NM5CG 60 V normal-level comes in a PQFN 5x6 mm2Source-Downpackage. The part offers a very low RDS(on)of 0.9 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications likeSMPS, battery-powered applications,battery management, andlow-voltage drives.

Documents

Technical documentation and resources