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WLCSP22_SOT8089
Discrete Semiconductor Products

GANE2R7-100CBAZ

Active
Nexperia USA Inc.

100 V, 2.7 MOHM GALLIUM NITRIDE (GAN) FET IN A 4.45 MM X 2.30 MM WAFER LEVEL CHIP-SCALE PACKAGE (WLCSP)

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DocumentsGate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs100 V, 2.7 mOhm Gallium Nitride (GaN) FET in a 4.45 mm x 2.30 mm Wafer Level Chip-Scale Package (WLCSP)+3
WLCSP22_SOT8089
Discrete Semiconductor Products

GANE2R7-100CBAZ

Active
Nexperia USA Inc.

100 V, 2.7 MOHM GALLIUM NITRIDE (GAN) FET IN A 4.45 MM X 2.30 MM WAFER LEVEL CHIP-SCALE PACKAGE (WLCSP)

Deep-Dive with AI

DocumentsGate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs100 V, 2.7 mOhm Gallium Nitride (GaN) FET in a 4.45 mm x 2.30 mm Wafer Level Chip-Scale Package (WLCSP)+3

Technical Specifications

Parameters and characteristics for this part

SpecificationGANE2R7-100CBAZ
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Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 6.83

Description

General part information

GANE2R7-100CBA Series

The GANE2R7-100CBA is a a general purpose 100 V, 2.7 mΩ Gallium Nitride (GaN) FET in a Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance and very low on-state resistance.