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GANE2R7-100CBAZActive
Nexperia USA Inc.
100 V, 2.7 MOHM GALLIUM NITRIDE (GAN) FET IN A 4.45 MM X 2.30 MM WAFER LEVEL CHIP-SCALE PACKAGE (WLCSP)
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Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs
100 V, 2.7 mOhm Gallium Nitride (GaN) FET in a 4.45 mm x 2.30 mm Wafer Level Chip-Scale Package (WLCSP)