Discrete Semiconductor Products

IRF9Z34NSTRRPBF

Obsolete

IR MOSFET™ P-CHANNEL ; D2PAK TO-263 PACKAGE; 100 MOHM;

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Discrete Semiconductor Products

Obsolete

IR MOSFET™ P-CHANNEL ; D2PAK TO-263 PACKAGE; 100 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF9Z34NSTRRPBF

Current - Continuous Drain (Id) @ 25°C	19 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	620 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	3.8 W, 68 W
Rds On (Max) @ Id, Vgs	100 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
INFINEON IRF9Z34NSTRRPBF	P-Channel	MOSFET (Metal Oxide)	D2PAK	35 nC	20 V	3.8 W 68 W	19 A	10 V	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	620 pF	Surface Mount	175 °C	-55 °C	100 mOhm	55 V
INFINEON IRF9Z34NPBF	P-Channel	MOSFET (Metal Oxide)	TO-220AB	35 nC	20 V	68 W	19 A	10 V	4 V	TO-220-3	620 pF	Through Hole	175 °C	-55 °C	100 mOhm	55 V
INFINEON IRF9Z34NSTRLPBF	P-Channel	MOSFET (Metal Oxide)	D2PAK	35 nC	20 V	3.8 W 68 W	19 A	10 V	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	620 pF	Surface Mount	175 °C	-55 °C	100 mOhm	55 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00