IRF9Z34 Series

Manufacturer: INFINEON

Catalog

IR MOSFET™ P-CHANNEL ; D2PAK TO-263 PACKAGE; 100 MOHM;

Part	FET Type	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)
INFINEON IRF9Z34NSTRRPBF	P-Channel	MOSFET (Metal Oxide)	D2PAK	35 nC	20 V	3.8 W 68 W	19 A	10 V	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	620 pF	Surface Mount	175 °C	-55 °C	100 mOhm	55 V
INFINEON IRF9Z34NPBF	P-Channel	MOSFET (Metal Oxide)	TO-220AB	35 nC	20 V	68 W	19 A	10 V	4 V	TO-220-3	620 pF	Through Hole	175 °C	-55 °C	100 mOhm	55 V
INFINEON IRF9Z34NSTRLPBF	P-Channel	MOSFET (Metal Oxide)	D2PAK	35 nC	20 V	3.8 W 68 W	19 A	10 V	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	620 pF	Surface Mount	175 °C	-55 °C	100 mOhm	55 V