Specification	PBSS8510PA,115

Current - Collector (Ic) (Max) [Max]	5.2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	95
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	3-PowerUDFN
Power - Max [Max]	2.1 W
Supplier Device Package	3-HUSON
Supplier Device Package [x]	2
Supplier Device Package [y]	2
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	340 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

PBSS8510PA Series

100 V, 5.2 A NPN low V_CEsat (BISS) transistor

Part	Package / Case	Power - Max [Max]	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Voltage - Collector Emitter Breakdown (Max) [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Current - Collector Cutoff (Max) [Max]	Transistor Type	Mounting Type	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature
Nexperia USA Inc. PBSS8510PA,115	3-PowerUDFN	2.1 W	3-HUSON	2	2	100 V	150 MHz	5.2 A	100 nA	NPN	Surface Mount	340 mV	95	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.94

Description

General part information

PBSS8510PA Series

NPN low VCEsatBreakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.