100 V, 5.2 A NPN low V_CEsat (BISS) transistor
100 V, 5.2 A NPN low V_CEsat (BISS) transistor
| Part | Package / Case | Power - Max [Max] | Supplier Device Package | Supplier Device Package [y] | Supplier Device Package [x] | Voltage - Collector Emitter Breakdown (Max) [Max] | Frequency - Transition | Current - Collector (Ic) (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Transistor Type | Mounting Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 3-PowerUDFN | 2.1 W | 3-HUSON | 2 | 2 | 100 V | 150 MHz | 5.2 A | 100 nA | NPN | Surface Mount | 340 mV | 95 | 150 °C |