Discrete Semiconductor Products

SI4160DY-T1-GE3

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MOSFET N-CH 30V 25.4A 8SO

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Discrete Semiconductor Products

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MOSFET N-CH 30V 25.4A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	SI4160DY-T1-GE3

Current - Continuous Drain (Id) @ 25°C	25.4 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	54 nC
Input Capacitance (Ciss) (Max) @ Vds	2071 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W, 5.7 W
Rds On (Max) @ Id, Vgs	4.9 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Vgs(th) (Max) @ Id	FET Type	Vgs (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology
Vishay General Semiconductor - Diodes Division SI4160DY-T1-GE3	2.4 V	N-Channel	20 V	4.9 mOhm	2071 pF	-55 °C	150 °C	4.5 V 10 V	54 nC	25.4 A	Surface Mount	2.5 W 5.7 W	8-SOIC	3.9 mm	0.154 in	8-SOIC	30 V	MOSFET (Metal Oxide)

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General part information

N-Channel 30 V 25.4A (Tc) 2.5W (Ta), 5.7W (Tc) Surface Mount 8-SOIC

Technical documentation and resources