SI4160 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 30V 25.4A 8SO
| Part | Vgs(th) (Max) @ Id | FET Type | Vgs (Max) | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Power Dissipation (Max) | Package / Case | Package / Case [y] | Package / Case [x] | Supplier Device Package | Drain to Source Voltage (Vdss) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2.4 V | N-Channel | 20 V | 4.9 mOhm | 2071 pF | -55 °C | 150 °C | 4.5 V 10 V | 54 nC | 25.4 A | Surface Mount | 2.5 W 5.7 W | 8-SOIC | 3.9 mm | 0.154 in | 8-SOIC | 30 V | MOSFET (Metal Oxide) |