Discrete Semiconductor Products

SIHG105N60EF-GE3

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MOSFET N-CH 600V 29A TO247AC

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Discrete Semiconductor Products

Active

MOSFET N-CH 600V 29A TO247AC

Technical Specifications

Parameters and characteristics for this part

Specification	SIHG105N60EF-GE3

Current - Continuous Drain (Id) @ 25°C	29 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	53 nC
Input Capacitance (Ciss) (Max) @ Vds	1804 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	208 W
Rds On (Max) @ Id, Vgs [Max]	102 mOhm
Supplier Device Package	TO-247AC
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SIHG105N60EF-GE3	600 V	29 A	208 W	102 mOhm	MOSFET (Metal Oxide)	30 V	1804 pF	Through Hole	N-Channel	-55 °C	150 °C	53 nC	5 V	TO-247-3	TO-247AC	10 V

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General part information

N-Channel 600 V 29A (Tc) 208W (Tc) Through Hole TO-247AC

Technical documentation and resources